In the above battery, although the efficiency of the cadmium sulfide and cadmium telluride polycrystalline thin film battery is higher than that of the amorphous silicon thin film solar cell, the cost is lower than that of the single crystal silicon battery, and the mass production is easy, but since the cadmium is highly toxic, It is a serious pollution to the environment and, therefore, is not the ideal replacement for crystalline silicon solar cells. It is understood that gallium arsenide III-V compounds and copper indium selenide thin film batteries have received widespread attention due to their high conversion efficiency. GaAs is a III-V compound semiconductor material with an energy gap of 1.4 eV, which is a value of high absorptivity sunlight, and is therefore an ideal battery material. The preparation of III-V compound thin film batteries such as GaAs mainly adopts MOVPE and LPE technology, and the GaAs thin film battery prepared by MOVPE method is affected by many parameters such as substrate dislocation, reaction pressure, III-V ratio and total flow rate. In addition to GaAs, other III-V compounds such as Gasb, GaInP and other battery materials have also been developed. In 1998, the conversion efficiency of GaAs solar cells produced by the Freiburg Solar System Research Institute in Germany was 24.2%, which was recorded in Europe. The conversion efficiency of the GaInP battery prepared for the first time was 14.7%. In addition, the Institute also used a stacked structure to fabricate GaAs, Gasb batteries, which are stacked with two separate cells. GaAs is used as the upper battery and Gasb is used as the lower battery. The obtained battery efficiency is 31.1%. Copper indium selenium CuInSe2 is abbreviated as CIC. The energy of CIS material is reduced to 1.leV, which is suitable for photoelectric conversion of sunlight. In addition, there is no photo-induced degradation of CIS thin film solar cells. Therefore, the use of CIS as a material for high conversion efficiency thin film solar cells has also attracted attention. The preparation of CIS battery film mainly includes vacuum evaporation method and selenization method. In the vacuum evaporation method, copper, indium, and selenium are vapor-deposited using respective evaporation sources, and the selenization method is selenization using a H2Se laminated film, but it is difficult to obtain a uniform CIS by this method. The CIS thin film battery has grown from the initial 8% conversion efficiency in the 1980s to the current 15%. The gallium-doped CIS battery developed by Matsushita Electric Industrial Co., Ltd. has a photoelectric conversion efficiency of 15.3% (area 1 cm 2 ). In 1995, the US Renewable Energy Research Laboratory developed a CIS solar cell with a conversion efficiency of 17.1%, which is the highest conversion efficiency of the battery in the world so far. It is expected that the conversion efficiency of CIS batteries will reach 20% by 2000, which is equivalent to polycrystalline silicon solar cells. As a semiconductor material for solar cells, CIS has the advantages of low price, good performance and simple process, and will become an important direction for the development of solar cells in the future. The only problem is the source of the material. Since both indium and selenium are relatively rare elements, the development of such batteries is bound to be limited.
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Talking about multi-component thin film solar cell
It is understood that in order to find alternatives to monocrystalline silicon cells, in addition to the development of polycrystalline silicon, amorphous silicon thin film solar cells, scientists continue to develop solar cells of other materials. Among them, it mainly includes gallium arsenide III-V compound, cadmium sulfide, cadmium sulfide and copper-bismuth selenide thin film batteries.